| PART |
Description |
Maker |
| SD52-150-R SD52-151-R SD52-100-R SD52-101-R SD52-1 |
High Power Density, Low Profile, Shielded Inductors
|
Cooper Bussmann, Inc.
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| FX5545G201 |
Industry Smallest and Low Profile 3W 1000mA DC/DC Buck Converter with High Output Power Density
|
VISAY[Vishay Siliconix]
|
| FX5545G1052V7T2 FX5545G105 FX5545G1052V7B1 FX5545G |
Industry Smallest and Low Profile 6.5W 2.0A DC/DC Buck Converter with High Output Power Density
From old datasheet system
|
VISAY[Vishay Siliconix]
|
| FX5545G005ADJT2E2 FX5545G0054V5B5 FX5545G0054V5B5E |
APL8,RV2.2.1,1.15V,105C
SLOW MODE 8BIT MCU 业界最小的超薄5W 1.5A直流/直流降压转换器的高输出功率密
Industry Smallest and Low Profile 5W 1.5A DC/DC Buck Converter with High Output Power Density 业界最小的超薄5W 1.5A直流/直流降压转换器的高输出功率密
9S12C128 TSMC3 GENERAL
Plug-In Relay; Contacts:4PDT; Coil Voltage AC Max:120V; Contact Carry Current:120A; Coil Resistance:8000ohm; Relay Terminals:Solder Lug; Relay Mounting:Plug-In; Contact Carrying Power:0.45W; Switch Function:4PDT
Industry Smallest and Low Profile 5W 1.5A DC/DC Buck Converter with High Output Power Density
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| MVAC250-24AFD MVAC-COVER |
250W 3 x 5 High Density AC-DC Power Supply Converter
250 Watt Silicon Type Metal Package Power Transistor
250W 3 x 5 High Density AC-DC Power Supply Converter
|
Murata Power Solutions ...
|
| ISPLSI2032VE ISPLSI2032VE-110LB49 ISPLSI2032VE-110 |
225 MHz 3.3V in-system prommable superFAST high density PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
3.3V In-System Programmable High Density SuperFAST⑩ PLD
3.3V In-System Programmable High Density SuperFAST PLD
IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4
IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.3
IC,Normally-Closed Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 EE PLD, 13 ns, PQCC44
3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 13 ns, PQFP44
3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 6 ns, PQCC44
3.3V In-System Programmable High Density SuperFASTPLD 3.3在系统可编程高密度PLD的超快⑩
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| FX5959G701ADJB1 FX5959G701ADJB5 FX5959G701ADJT5 FX |
LED DISPLAY DRIVER, PBGA25
Power LED Driver the Smallest and Low Profile, Constant Current Source 0 - 2.0A, 2.5V to 7V, with 450W/in3 Power Density and High Efficiency
|
VISHAY SEMICONDUCTORS
VISAY[Vishay Siliconix]
|
| STP38N06 3645 |
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| TSM3400CXRF |
High Density Cell Design for Ultra Low On-resistance
|
TY Semiconductor Co., Ltd
|
| A07 A0710BBB1 A0750BSB1 A0750BTB1 A0710BDB1 A0710B |
LOW PROFILE HIGH DENSITY IDC SOCKET 低收缩高密度IDC的插
|
DB Lectro Inc.
DB Lectro, Inc.
|
