PART |
Description |
Maker |
IPB070N06NG IPP070N06NG |
OptiMOS? Power-Transistor OptiMOS㈢ Power-Transistor OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管
|
Infineon Technologies AG
|
IPB100N04S2L-03 IPP100N04S2L-03 SP0002-19062 SP000 |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管 OptiMOS㈢ Power-Transistor OptiMOS? Power-Transistor
|
Infineon Technologies AG
|
2N538 2N522 2N941 2N586 2N502A 2N795 2N738 2N779 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 8V V(BR)CEO | TO-5 TRANSISTOR | BJT | PNP | 8V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-9 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-9 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 200MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | TO-18 晶体管|晶体管|叩| 50V五(巴西)总裁|8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 500mA的一(c)|
|
Central Semiconductor, Corp. Microsemi, Corp.
|
BB1 BB1A4A BB1A4M BB1L3N BB1A3M BB1F3P BB1J3P BB1L |
COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching Hybrid transistor
|
NEC Corp. NEC[NEC]
|
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
SPU01N60C3 SPD01N60C3 Q67040-S4188 Q67040-S4193 |
for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor COOL MOS⒙ POWER TRANSISTOR Cool MOS⑩ Power Transistor Cool MOSPower Transistor
|
INFINEON[Infineon Technologies AG]
|
BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
FN1A4Z FN1A4Z-L FN1A4Z-T2B FN1A4ZM69 |
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD, SC-59, 3 PIN MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD Compound transistor
|
Honeywell International, Inc. NEC
|
KTC1008 KTC1008GR KTC1008-15 |
EPITAXIAL PLANAR NPN TRANSISTOR General Purpose Transistor 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
KEC(Korea Electronics) Korea Electronics (KEC)
|
ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C) TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 3.5AI(丙)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 3A条一c)| TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 10A条一(c)|1 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 8A条一(c)| TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 3A条一(c)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五(巴西)总裁|5A一(c
|
Cypress Semiconductor, Corp. Vicor, Corp. Atmel, Corp. Advanced Analogic Technologies, Inc. EPCOS AG
|
FN1L4Z FN1L4Z-L FN1L4Z-T2B FN1L4ZM62 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-346 晶体管| 50V五(巴西)总裁| 100mA的一(c)|的SOT - 346 MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD Compound transistor
|
NEC, Corp. NEC[NEC]
|
MUN2111T1G MUN2111T1 MUN2140T1 DTA144W MUN211 MUN2 |
Bias Resistor Transistor Bias Resistor Transistor 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR DIODE ZENER SINGLE 150mW 27Vz 2mA-Izt 0.0704 0.1uA-Ir 18.9 SOT-523 3K/REEL LED 2HI 5MM SUP BRIGHT GRN PCMNT BRT Transistor PNP
|
ONSEMI[ON Semiconductor]
|