| PART |
Description |
Maker |
| CM1000E4C-66R |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM1200HG-66H09 |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM600E2Y-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM400DY-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800HB-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM400HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM1200HC-66H |
HIGH POWER SWITCHING USE INSULATED TYPE
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| ADP3367 ADP3367AR |
2nd Level Over Voltage Protection for 2, 3, or 4 Cell LiIon & LiPoly Batteries (2nd Lev Protection) 8-SM8
5 V Fixed, Adjustable Low-Dropout Linear Voltage Regulator
|
Analog Devices, Inc.
AD[Analog Devices]
|
| QID3320004 |
Dual IGBT HVIGBT Module 200 Amperes/3300 Volts
|
Powerex Power Semicondu...
|
| CM200HG-130H |
Single IGBTMOD HVIGBT Module 200 Amperes/6500 Volts
|
Powerex Power Semiconductor...
|
| CM1800HCB-34N |
Single IGBTMOD HVIGBT Module 1800 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| QID4515001 |
Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts
|
Powerex Power Semiconductors
|
