| PART |
Description |
Maker |
| CMUT5401E |
ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR
|
Central Semiconductor Corp
|
| CMUT5551E |
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CMPT3906E CMPT3904E |
ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSITORS
|
CENTRAL[Central Semiconductor Corp]
|
| CZT5551E |
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CMPT5087E CMPT5088E CMPT5087E10 |
ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS
|
Central Semiconductor Corp
|
| CMPD914E10 |
ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE
|
Central Semiconductor Corp
|
| CMPD914E |
ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| CZT3090LE |
ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR
|
Central Semiconductor Corp
|
| SP0208LE5 |
Amplified “Zero Height SiSonic Microphone with Enhanced RF Specification
|
Knowles Electronics
|
| KV1913A KV1933A KV1973A KV2143 KV2153 GC1303 KV212 |
ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES
ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES C BAND, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES C BAND, 1.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
OPTOCOUPLER 10MBPS OC 5-SOP
Tuning Varactors
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 749010013 744761068A |
All 16 terminals must lie on a plane within 004 of surface A after lead tinning
specification for release
specification for release
|
Wurth Elektronik GmbH & Co. KG, Germany.
Wurth Elektronik GmbH &...
|
