PART |
Description |
Maker |
GS8180DV18D-200I GS8180DV18D-133I GS8180DV18D-167 |
18Mb Burst of 4 SigmaQuad SRAM
|
GSI[GSI Technology]
|
GS8180Q18D-200I GS8180Q18D-100 GS8180Q18D-100I GS8 |
18Mb Burst of 2 SigmaQuad SRAM 1M X 18 STANDARD SRAM, 2.3 ns, PBGA165 18Mb Burst of 2 SigmaQuad SRAM 1M X 18 STANDARD SRAM, 3 ns, PBGA165 18Mb Burst of 2 SigmaQuad SRAM 512K X 36 STANDARD SRAM, 3 ns, PBGA165
|
GSI Technology, Inc.
|
GS818DV18D-250I GS818DV18D-300 GS818DV18D-300I GS8 |
250MHz 1M x 18 18MB sigmaQuad SRAM 300MHz 1M x 18 18MB sigmaQuad SRAM 333MHz 1M x 18 18MB sigmaQuad SRAM
|
GSI Technology
|
GS8180D18D-100I GS8180D18D-167 |
18Mb Burst of 4 SigmaQuad SRAM 1M X 18 STANDARD SRAM, 3 ns, PBGA165 18Mb Burst of 4 SigmaQuad SRAM 1M X 18 STANDARD SRAM, 2.5 ns, PBGA165
|
GSI Technology, Inc.
|
GS8182Q18D-200I GSITECHNOLOGY-GS8182Q36D-133IT |
18Mb Burst of 2 SigmaQuad-II SRAM 1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT http:// Integrated Device Technology, Inc.
|
IDT71P73204250BQ IDT71P73104250BQ IDT71P73804250BQ |
18Mb Pipelined DDR⑩II SRAM Burst of 4 18Mb Pipelined DDR垄芒II SRAM Burst of 4
|
Integrated Device Technology
|
GS8662D08E-250 GS8662D08E-200 GS8662D08GE-167I GS8 |
72Mb SigmaQuad-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
IDT71P79804 IDTIDT71P79104250BQI IDTIDT71P79104267 |
18Mb Pipelined DDR垄芒II SIO SRAM Burst of 2 18Mb Pipelined DDR?II SIO SRAM Burst of 2
|
Integrated Device Technology
|
GS8162Z72C |
18Mb Burst SRAMs
|
GSI Technology
|