| PART |
Description |
Maker |
| CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的（256 × 36/512K × 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AS5C4008F-35 AS5C4008F-35_H AS5C4008F-35_LH AS5C40 |
512K x 8 SRAM SRAM MEMORY ARRAY
512K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, LCC-32
512K X 8 STANDARD SRAM, 17 ns, CDFP32 CERAMIC, DFP-32
512K X 8 STANDARD SRAM, 35 ns, CDFP32 CERAMIC, DFP-32
512K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32
512K X 8 STANDARD SRAM, 12 ns, CDIP32
512K X 8 STANDARD SRAM, 25 ns, CQCC32
512K X 8 STANDARD SRAM, CDSO32
512K X 8 STANDARD SRAM, 15 ns, CDSO32
512K X 8 STANDARD SRAM, 12 ns, CDFP32
|
Austin Semiconductor, Inc
Micross Components
AUSTIN SEMICONDUCTOR INC
|
| GS8161E18BD-150 |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
| TC55VD1636FF-133 |
512K Word x 36 Bit Synchronous No-turnround Static RAM(512K 字x36位同步无转向静RAM)
|
Toshiba Corporation
|
| CY62157EV18LL-55BVXI |
8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 55 ns, PBGA48
|
Cypress Semiconductor, Corp.
|
| GS816236BGB-250I GSITECHNOLOGY-GS816218BD-150 |
1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PBGA119
|
GSI Technology, Inc.
|
| MSM8521CBI-48D MSM8521CBI-020 MSM8521CB-020 MSM851 |
512K X 8 STANDARD SRAM, 20 ns, PBGA48
512K x 8 Static RAM Issue 5.2 April 2001
|
MOSAIC
http://
|
| TC55V16366FF-133 |
512K Word x 36 Bit Synchronous Pipelined Burst Static RAM(512K 字x 36位同步管道脉冲静RAM)
|
Toshiba Corporation
|
| GS8161E36BD-150 GS8161E36BT-150 GS8161E36BGT-200I |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PQFP100
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PQFP100
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 100万18，为512k × 36，为512k × 36 35.7同步突发静态存储器
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| CY14B104MA-ZSP25XI CY14B104KA-ZS25XCT CY14B104KA C |
4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock
512K X 8 NON-VOLATILE SRAM, 20 ns, PDSO44
|
CYPRESS SEMICONDUCTOR CORP
|
| W24V04 |
512K×8bit CMOS Static RAM(512K×8位CMOS静态RAM)
|
Winbond Electronics Corp
|
|
