| PART |
Description |
Maker |
| GS78108B-12 GS78108B-12I GS78108B GS78108B-10 GS78 |
1M x 8 8Mb Asynchronous SRAM 1M X 8 STANDARD SRAM, 15 ns, PBGA119
|
GSI Technology, Inc.
|
| N08L163WC1C |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
| N08L083WC2C |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K x 8 bit
|
NanoAmp Solutions
|
| N08M163WL1A |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
| N08M163WL1AD-70I N08M163WL1A N08M163WL1AB N08M163W |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| GS78116AGB-8I GS78116AB-10 GS78116AB-10I GS78116AB |
512K X 16 STANDARD SRAM, 10 ns, PBGA119
512K x 16 8Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
| GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I |
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology, Inc.
Molex, Inc.
|
| GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM
8ns 1M x 4 4Mb asynchronous SRAM
12ns 1M x 4 4Mb asynchronous SRAM
|
http://
GSI Technology
|
| GS71024T-8T GS71024T-10T GS71024T-10IT GS71024U-10 |
8ns 64K x 24 1.5Mb asynchronous SRAM
1.5Mb4K x 24Bit）Asynchronous SRAM(1.5M位（64K x 24位）异步静态RAM) 即：1.5MB4K的x 24位）异步SRAM50万位4K的24位）异步静态RAM）的
x24 SRAM x24的SRAM
|
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
|
| M68AW127B M68AW127BL70MC1T M68AW127BL70MC6T M68AW1 |
1Mbit 128K x8 / 3.0V Asynchronous SRAM
CAC 6C 6#16S SKT PLUG
1Mbit 128K x8, 3.0V Asynchronous SRAM 1Mbit28K的8.0V异步SRAM
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| R1RW0416DSB-2PR R1RW0416D R1RW0416DGE-2LR R1RW0416 |
4M High Speed SRAM (256-kword x 16-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
SRAM
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| MT55L512V18F MT55L256V32F MT55L256V36F |
(MT55LxxxLxxF) 8Mb SRAM
|
Micron Technology
|
