| PART |
Description |
Maker |
| HSDL-1100008 HSDL-1100018 HSDL-1100007 HSDL-110001 |
IrDA 1.1 Compliant 4Mb/s 5V Transceiver. Top Option.Tape & ReelLINot Recommended for New Designs)
IrDA 1.1Compliant 4Mb/s 5V Transceiver. Top Opt. 10 units/stripLINot Recommended for New Designs)
IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Option.Tape & Reel＜LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Option.Tape
IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Opt.10 units/strip＜LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Opt.10单位/条\u0026lt;LI\u0026gt;（不推荐用于新设计）
|
Ecliptek, Corp.
|
| GS74108AX-7 GS74108AX-7I GS74108AJ-7I GS74108ATP-1 |
7ns 512K x 8 4Mb asynchronous SRAM
10ns 512K x 8 4Mb asynchronous SRAM
|
GSI Technology
|
| HSDL-3602-007 HSDL-3602-008 HSDL-3602-037 HSDL-360 |
HSDL-3602-007 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
HSDL-3602-008 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
HSDL-3602-037 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
HSDL-3602-038 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
|
Agilent (Hewlett-Packard)
|
| IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM)
4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的（256 × 18）的SRAMMb的（256 × 18）同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| GS74108J GS74108TP |
512K x 8 4Mb Asynchronous SRAM
|
GSI Technology
|
| GS74117AX-8I GS74117AX GS74117AX-10 GS74117AX-10I |
256K x 16 4Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
| ID245E01 |
4MB Flash Memory Card
|
SHARP[Sharp Electrionic Components]
|
| ACE25C400 |
4MB Serial Flash Memory
|
ACE Technology Co., LTD...
|
| GS842Z18AB-180I GS842Z18AB-100 GS842Z18AB-100I GS8 |
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 8 ns, PBGA119
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 12 ns, PBGA119
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 128K X 36 ZBT SRAM, 8 ns, PBGA119
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 10 ns, PBGA119
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
|
| LH28F320S5HNS-L90 |
Flash Memory 32M (4MB x 8 / 2MB x 16)
|
Sharp Microelectronics
|
| M58MR064-ZCT M58MR064D120ZC6T M58MR064C100ZC6T M58 |
64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory 64兆位4Mb的x16插槽，复用的I / O，双行，突发1.8V电源快闪记忆
|
STMicroelectronics N.V.
意法半导
|
| IS61NVF12836A-6.5B2 IS61NVF12836A-6.5B2I IS61NLF25 |
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 6.5 ns, PBGA119
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 7.5 ns, PBGA165
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 6.5 ns, PQFP100
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 7.5 ns, PBGA119
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 7.5 ns, PQFP100
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
|
