| PART |
Description |
Maker |
| GS71208TP-8 |
128K x 8 1Mb Asynchronous SRAM 128K X 8 STANDARD SRAM, 8 ns, PDSO32
|
GSI Technology, Inc.
|
| GS71216TP GS71216TP-10 GS71216TP-10I GS71216TP-8 G |
10ns 64K x 16 1Mb asynchronous SRAM
8ns 64K x 16 1Mb asynchronous SRAM
|
GSI[GSI Technology]
|
| 5962-0323601QXA 5962-0323601QXC 5962-0323601QXX 59 |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish hot solder dipped.
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish gold.
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish factory option.
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish hot solder dipped.
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish gold.
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish factory option.
128K x 32 SRAM. 15ns access time. Lead finish hot solder dipped.
128K x 32 SRAM. 15ns access time. Lead finish factory option.
128K x 32 SRAM. 15ns access time. Lead finish gold.
|
Aeroflex Circuit Technology
|
| GS72116J-15 GS72116U-15I GS72116TP-15I GS72116J-8I |
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 15 ns, PDSO44
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 15 ns, PBGA48
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 8 ns, PDSO44
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 8 ns, PQFP44
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 10 ns, PQFP44
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 12 ns, PBGA48
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 12 ns, PDSO44
|
GSI Technology, Inc.
|
| GS71116TJ GS71116TP GS71116TU |
(GS71116x) 64K x 16 1Mb Asynchronous SRAM
|
GSI Technology
|
| R1LV0108ESP-5SIB0 R1LV0108ESP-5SIS0 R1LV0108ESP-5S |
1Mb Advanced LPSRAM (128k word x 8bit)
|
Renesas Electronics Corporation
|
| R1LP0108ESA-5SI R1LP0108ESF-7SR R1LP0108ESF-7SI R1 |
1Mb Advanced LPSRAM (128k word x 8bit)
|
Renesas Electronics Corporation
|
| R1LP0108ESP-5SIB0 R1LP0108ESP-5SIS0 R1LP0108ESP-5S |
1Mb Advanced LPSRAM (128k word x 8bit)
|
Renesas Electronics Corporation
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| AS7C31025A-20TJI AS7C1025A AS7C1025A-10JC AS7C1025 |
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125
Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85
Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
High Speed CMOS Logic Quad 2-Input AND Gates 14-TSSOP -55 to 125
Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85
Parallel-Load 8-Bit Shift Registers 16-TSSOP -40 to 85
5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
|
Alliance Semiconductor ...
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| UPD424900LLE-A80 UPD424900LLE-A70 UPD424900LG5M-A8 |
FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
3.3V 16K/32K x 36 FLEx36™ Asynchronous Dual-Port Static
x9 Fast Page Mode DRAM X9热卖快速页面模式的DRAM
|
Powerex, Inc.
|
| M68AF127B M68AF127BB M68AF127BL55B1T M68AF127BL55B |
1Mbit 128K x8, 5V Asynchronous SRAM
|
STMicroelectronics
|
