| PART |
Description |
Maker |
| AMP-15 AMP-76 AMP75 AMP76 AMP77 |
(AMP-xx) Operational Ampl
|
Mini-Circuits
|
| UPB1502GR UPB1502GR1 UPB1502GR1-E1 UPB1502GR-E1 |
1.7 GHz/ 2.0 GHz LOW-POWER TWO-MODULUS PRESCALER DIVIDED-BY-64/65, 128/129 1.7千兆 2.0 GHz的低功耗双分频DIVIDED-BY-64/65，一百二十九分之一百二十八
1.7 GHz/ 2.0 GHz Low-Power Two-Modulus Prescaler(1.7GHz 2.0GHz 定标
|
NEC, Corp.
NEC Corp.
|
| RMPA61810 |
6-18 GHz 1W Power Amp
Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC
|
FAIRCHILD[Fairchild Semiconductor]
|
| AGR18125E AGR18125EF AGR18125EU |
125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| PE6809-16 |
0.5 Watts Low Power Precision WR-28 Waveguide Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|
| PE6818 |
40 Watts Medium Power WR-28 Waveguide Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|
| AGR18090E AGR18090EF AGR18090EU |
90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| PE6806 PE6806-16 |
2 Watts Low Power WR-90 Waveguide Load 8.2 GHz to 12.4 GHz
|
Pasternack Enterprises,...
|
| SST13LP05 SST13LP05-MLCF SST13LP05-MLCF-K |
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module
|
SST[Silicon Storage Technology, Inc]
|
| TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| TIM1414-8-252 |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
