| PART |
Description |
Maker |
| KP024J P0120004P |
1.5W GaAs Power FET (Pb-Free Type)
|
EUDYNA[Eudyna Devices Inc]
|
| KP022J P0120002P |
250mW GaAs Power FET (Pb-Free Type)
|
EUDYNA[Eudyna Devices Inc]
|
| KP027J P0120007P |
250mW GaAs Power FET (Pb-Free Type)
|
Eudyna Devices Inc
|
| MGF0906 MGF0906B 0906B |
LS BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
L,S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| RJK03F6DNS-00-J5 |
30 A, 30 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, HWSON-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited
Sumitomo Electric Industries, Ltd.
|
| NE650R479A NE650R479A-T1 |
0.4 W L, S-BAND POWER GaAs MES FET 0.4册，S波段功率GaAs场效应晶体管
0.4 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| CGD985HCI |
1 GHz, 25 dB gain GaAs high output power doubler CGD985HCI<SOT115J|<<<1<Always Pb-free,;CGD985HCI/01<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| CFH2162-P3 |
Power GaAs FET
|
Mimix Broadband
|
| TIM1414-5-252 |
POWER GAAS FET
|
Toshiba Semiconductor
|
