| PART |
Description |
Maker |
| K6T4008C1C K6T4008C1C-B K6T4008C1C-DB55 K6T4008C1C |
512Kx8 bit Low Power CMOS Static RAM
512K X 8 STANDARD SRAM, 70 ns, PDIP32
512K X 8 STANDARD SRAM, 55 ns, PDSO32
512K X 8 STANDARD SRAM, 70 ns, PDSO32
512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
http://
|
| HY628400 |
IC,SRAM,512KX8,CMOS,DIP,32PIN,PLASTIC
|
Hynix
|
| HY62LF16804A-I HY62LF16804A-C HY62LF16804A HY62LF1 |
512K X 16 STANDARD SRAM, 85 ns, PBGA48
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
512Kx16bit full CMOS SRAM
|
HYNIX SEMICONDUCTOR INC
Nel Frequency Controls,inc
|
| K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| LP61L1024S-12 LP61L1024X-12 LP61L1024V-12 LP61L102 |
128K X 8 BIT 3.3V HIGH SPEED LOW VCC CMOS SRAM 128K的8.3V的高速低虚拟通道连接CMOS SRAM
128K X 8 BIT 3.3V HIGH SPEED LOW VCC CMOS SRAM 128K的83.3V的高速低虚拟通道连接CMOS SRAM
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| MX29F400BT MX29F400BTC-90 |
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
|
MXIC
|
| MX29F400TM 29F4000 MX29F400TMC-90 MX29F400TTC-70 M |
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
| BS62LV1600ECG70 BS62LV1600ECG55 BS62LV1600FCP55 BS |
Very Low Power CMOS SRAM 2M X 8 bit 极低功耗CMOS SRAMx 8
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PBGA48
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PDSO44
|
BRILLIANCE SEMICONDUCTOR INC
BRILLIANCE SEMICONDUCTOR, Inc.
Brilliance Semiconducto...
|
| IC62LV5128LL IC62LV5128L IC62LV5128L-55B IC62LV512 |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
