PART |
Description |
Maker |
IXBN75N170A |
Discrete IGBTs BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBT10N170 IXBH10N170 |
Discrete IGBTs High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IRGP420U GP420U |
Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠? 500V Discrete IGBT in a TO-3P (TO-247AC) package Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管(IGBTs)(超快速绝缘栅型双极型晶体管)
|
International Rectifier, Corp.
|
SG200N06S |
Discrete IGBTs
|
Sirectifier Global Corp... Sirectifier Semiconductors Sirectifier Semiconduct...
|
SG50N06D2S |
(SG50N06D2S / SG50N06D3S) Discrete IGBTs
|
Sirectifier Semiconductors
|
IXGX64N60B3D1 IXGR48N60C3D1 IXGR48N60B3D1 IXGP48N6 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
|
IXYS Corporation
|
IXBH42N170A IXBT42N170A |
(IXBH42N170A / IXBT42N170A) BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
SGB02N60 SGP02N60 Q67040-S4504 Q67040-S4505 Q67041 |
FAST IGBT IN NPT TECHNOLOGY 快速IGBT技术在不扩散核武器条约 IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT IGBTs & DuoPacks - 2A 600V TO 252AA SMD IGBT IGBTs & DuoPacks - 2A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
IXBH15N160 |
(IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
232266296724 232266296 232266296209 232266296211 2 |
PTC Thermistors For Degaussing, Dual, Mono And Double Mono Cased PTC的有关消磁热敏电阻,双,单声道和双声道套
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
|
IXBH28N170A |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|