PART |
Description |
Maker |
M58LR128HD70ZB5E M58LR128HD70ZB5U |
128 Mbit (x16, Mux I/O, Multiple Bank, Multilevel interface, Burst)
|
Numonyx B.V
|
M36L0R7050L1ZAMF M36L0R7050L1ZAME M36L0R7060U1ZAMF |
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package 128兆位(复用的I / O,多银行,多层次,多突发)快闪记忆体264兆移动存储芯片,1.8V电源多芯片封 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package 128兆位(复用的I / O,多银行,多层次,多突发)快闪记忆体24兆移动存储芯片,1.8V电源多芯片封
|
意法半导 STMicroelectronics N.V.
|
M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107 64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package 64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
M36LLR8760 M36L0R7050 M36L0R7050B0ZAQE M36L0R7050B |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package 128兆位(多银行,多层次,突发)闪存32兆位00万16)移动存储芯片,1.8V电源多芯片封 CAP 2.2PF 200V 0.5PF C0H DIP-2 BULK S-MIL-C-39014 ER 23C 16 12 8 4 SKT RECP WALL CAP 0.1UF 50V 10% X7R DIP-2 BULK P-MIL-C-39014 128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM From old datasheet system
|
STMicroelectronics N.V. ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
|
M58LR128KT855 M58LR256KT855 M58LR128KT705 M58LR256 |
128 or 256 Mbit (】16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
M58LR128FB85ZB6T |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
ST Microelectronics
|
M58LR128F-ZB M58LR128F-ZBE M58LR128F-ZBF M58LR128F |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
M58LR128GT |
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
M29DW128F_06 M29DW128F M29DW128F60NF1 M29DW128F60N |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
|
STMICROELECTRONICS[STMicroelectronics]
|
M29DW128F70ZA6 M29DW128F60ZA6 M29DW128F70ZA6E M29D |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
|
ST Microelectronics
|
M29DW128F M29DW128F70NF1 M29DW128F70NF1E M29DW128F |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
|
Numonyx B.V
|
N25Q128A11BF840E N25Q128A21BF840E N25Q128A31BF840E |
128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface 128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V http:// Micron Technology
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