| PART |
Description |
Maker |
| 2SB1197K A5800311 2SB1197KQ |
Low Frequency Transistor(-32V/ -0.8A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
From old datasheet system
Low Frequency Transistor(-32V, -0.8A)
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
Rohm
|
| NJW21193G NJW21194G NJW21193 |
200W Medium Frequency Audio Output Transistors
Silicon Power Transistors
|
ON Semiconductor
|
| 2N4232A 2N6313 2N6314 2M4233A 2M6312 2N4231A 2N423 |
POWER TRANSISTORS(5A,75W)
POWER TRANSISTORS(5A/75W)
POWER TRANSISTORS(5A /75W)
POWER TRANSISTORS(5A75W)
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| BF200B |
NPN High Frequency Transistors
|
Bharat
|
| 4124 |
HIGH FREQUENCY SWITCHING TRANSISTORS
|
UTC
|
| UTC4128 |
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS
|
Unisonic Technologies
|
| EMX5 EMX51 |
High transition frequency (dual transistors)
|
Rohm
|
| MRF502 MRF501 |
(MRF501 / MRF502) High Frequency Transistors
|
Motorola Semiconductor
|
| UMX21N |
High transition frequency (dual transistors)
|
Rohm
|
| 4128 |
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS
|
UTC[Unisonic Technologies]
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
