PART |
Description |
Maker |
DIM200PHM33-F000 |
Half Bridge IGBT Module 200 A, 3300 V, N-CHANNEL IGBT
|
DYNEX SEMICONDUCTOR LTD Dynex Semiconductor, Ltd.
|
DIM200PKM33-F000 |
IGBT Chopper Module 200 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
CM1200HB-66H |
HIGH POWER SWITCHING USE INSULATED TYPE 1200 A, 3300 V, N-CHANNEL IGBT
|
Mitsubishi Electric, Corp. POWEREX[Powerex Power Semiconductors]
|
1MBI600PX-140 |
IGBT MODULE 800 A, 1400 V, N-CHANNEL IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
QID3320004 |
Dual IGBT HVIGBT Module 200 Amperes/3300 Volts
|
Powerex Power Semicondu...
|
APT17F80S APT17F80B |
Power FREDFET; Package: D3 [S]; ID (A): 18; RDS(on) (Ohms): 0.58; BVDSS (V): 800; 18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET 18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp. MICROSEMI POWER PRODUCTS GROUP
|
RQJ0303PGDQA RQJ0303PGDQATL-E |
3300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET Silicon P Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB 35A/ 1200V/ NPT Series N-Channel IGBT 35A, 1200V, NPT Series N-Channel IGBT 35 A, 1200 V, NPT N-Channel IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
PM800DV1A060 PM800DV1B060 |
Single Phase IGBT Inverter Output 800 Amperes/600 Volts Intellimod Module Single Phase IGBT Inverter Output 800 Amperes/600 Volts
|
Powerex Power Semiconductors
|
IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability IGBT Discretes: Low Saturation Voltage Types High Voltage IGBT(VCES200V,VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD 1200V high voltage IGBT
|
IXYS Corporation IXYS, Corp.
|