| PART |
Description |
Maker |
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| CM200DY-24NF |
Trench Gate Design Dual IGBTMOD
|
Powerex Power Semiconductors
|
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM300DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 300 Amperes/600 Volts
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
|
| CM400DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 400 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 400 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 400 Amperes/600 Volts
|
Powerex Power Semiconductor...
Powerex Power Semiconductors
|
| CM300DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 300 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| HER306-T3 HER306-TB HER302-T3 HER302-TB HER308 HER |
3.0A HIGH EFFICIENCY RECTIFIER 3.0A的高效整
85000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
28000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
20000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| XC2S200E-6FG676C XC2S200E-6FG676I XC2S200E-6FGG456 |
Second generation ASIC replacement technology
FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA676
100,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA256
400000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA456
300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 1536 CLBS, 93000 GATES, 400 MHz, PBGA456
Spartan-IIE FPGA
Product Availability
|
XILINX INC
Xilinx, Inc.
|
