PART |
Description |
Maker |
IRF350-353 IRF351 IRF352 IRF353 IRF350 |
N-Channel Power MOSFETs, 15A, 350V/400V N沟道功率MOSFET5A条,350V/400V N-Channel Power MOSFETs/ 15A/ 350V/400V
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Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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RFP15N05L RFP15N06L RFP15N05 |
15A/ 50V and 60V/ 0.140 Ohm/ Logic Level N-Channel Power MOSFETs 15A 50V and 60V 0.140 Ohm Logic Level N-Channel Power MOSFETs 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs
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FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
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APT6045BVR |
POWER MOS V 600V 15A 0.450 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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APT12080JVR |
POWER MOS V 1200V 15A 0.800 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
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ADPOW[Advanced Power Technology]
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IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD HiPerFET Power MOSFETs Q-Class Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
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IXFH32N50Q IXFT32N50Q |
32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET?/a> Power MOSFETs Q-Class HiPerFET⑩ Power MOSFETs Q-Class Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
RFP40N10 RF1S40N10SM RFG40N10 FN2431 |
CAP 180PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs 40A 100V 0.040 Ohm N-Channel Power MOSFETs From old datasheet system
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Intersil, Corp. INTERSIL[Intersil Corporation]
|
FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管)
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
IXFM6N90 IXFH6N100 IXFH6N90 IXFM6N100 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电2.0Ω的N沟道增强HiPerFET功率MOSFET) 6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
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UF630L-TF3-T UF630 UF630L-TA3-T UF630-TA3-T UF630- |
9A, 200V, 0.4?/a> , N-CHANNEL POWER MOSFETS 9A, 200V, 0.4 , N-CHANNEL POWER MOSFETS 9A, 200V, 0.4з , N-CHANNEL POWER MOSFETS 9A条,00V.4з的N通道功率MOSFET
|
UTC[Unisonic Technologies] 友顺科技股份有限公司 Unisonic Technologies Co., Ltd.
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IXFH80N10Q IXFT80N10Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?5m惟??娌??澧?己??iPerFET???MOSFET) Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Q-Class
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IXYS Corporation
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