| PART |
Description |
Maker |
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
| PD488588FF-C80-40-DH1 PD488588FF |
288M bits Direct Rambus DRAM for High Performance Solution
|
ELPIDA[Elpida Memory]
|
| V54C365164 V54C365164VC |
HIGH PERFORMANCE 166/143/125 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16
|
MOSEL[Mosel Vitelic, Corp]
|
| V54C365804VC |
HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8
|
MOSEL[Mosel Vitelic, Corp]
|
| V43644Y04VCTG-10PC V43644Y04VTG-10PC |
4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM
|
MOSEL-VITELIC
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| V54C365164VD |
HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16
|
Mosel Vitelic Corp
|
| MT4LC2M8F4 |
2M x 8 Burst EDO DRAM
|
Micron Technology
|
| V54C365804VB |
High Performance PC100/125MHz 3.3 Volt 8M X 8 Synchronous DRAM(3.3V高性能pc100/125MHz 8Mx8同步动态RAM)
|
Mosel Vitelic, Corp.
|
| MT9LD272G-5B MT18LD472G-5B MT9LD272G-5BN MT9LD272G |
x72 Burst EDO Page Mode DRAM Module x72脉冲EDO页面模式内存模块
|
Fujitsu, Ltd.
|
| MACH111SP MACH231-14JI/1 MACH131-14JI/1 MACH131-5J |
EMITTER IR 880NM 5MM SMD RADIAL
SUR ABSORBER 7MM 430V 1250A ZNR
High-Performance EE CMOS Programmable Logic EE PLD, 14 ns, PQCC44
High-Performance EE CMOS Programmable Logic EE PLD, 7.5 ns, PQFP100
High-Performance EE CMOS Programmable Logic EE PLD, 14 ns, PQCC84
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQCC84
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQFP100
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQCC68
High-Performance EE CMOS Programmable Logic EE PLD, 10 ns, PQFP100
High-Performance EE CMOS Programmable Logic EE PLD, 7.5 ns, PQCC68
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQFP44
High-Performance EE CMOS Programmable Logic EE PLD, 10 ns, PQFP44
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQCC44
INDUSTRIAL TO RJ45 CAT5E PATCH CORD 15FT EE PLD, 18 ns, PQCC44
INDUSTRIAL TO INDUSTRIAL CAT6 PATCH CORD 5FT EE PLD, 18 ns, PQCC44
INDUSTRIAL TO RJ45 CAT6 PATCH CORD 20FT EE PLD, 15 ns, PQCC84
High-Performance EE CMOS Programmable Logic EE PLD, 15 ns, PQCC44
High-Performance EE CMOS Programmable Logic EE PLD, 15 ns, PQFP44
INDUSTRIAL TO RJ45 CAT5E PATCH CORD 20FT EE PLD, 18 ns, PQCC44
RES 3.32K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
RJ45-DB9M (DTE)
Silver Mica Capacitor; Capacitance:62pF; Capacitance Tolerance: /- 5%; Series:CD15; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:No RoHS Compliant: No
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| CY3732VP352200AXC CY3764VP352200AXC CY37128VP35220 |
5V, 3.3V, ISR High-Performance CPLDs
5V, 3.3V, ISRHigh-Performance CPLDs EE PLD, 12 ns, PQFP44
5V, 3.3V, ISRHigh-Performance CPLDs EE PLD, 15 ns, PQFP208
EE PLD, 7.5 ns, PQFP208 PLASTIC, QFP-208
EE PLD, 15 ns, PQFP100 PLASTIC, TQFP-100
5V, 3.3V, ISRTM High-Performance CPLDs EE PLD, 12 ns, PQFP208
5V, 3.3V, ISRHigh-Performance CPLDs EE PLD, 10 ns, PQFP160
5V, 3.3V, ISRHigh-Performance CPLDs EE PLD, 15 ns, PBGA256
5V, 3.3V, ISRHigh-Performance CPLDs EE PLD, 15 ns, PBGA352
5V, 3.3V, ISRTM High-Performance CPLDs EE PLD, 10 ns, PQFP160
5V, 3.3V, ISRHigh-Performance CPLDs EE PLD, 20 ns, PBGA352
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| UPD42S17170LLE-A70 UPD42S17170LG5-A70-7KF UPD42S17 |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
|
