| PART |
Description |
Maker |
| TC1268 TC1268-2.5VOA TC1268-2.5VOATR |
The TC1268 is a fixed output, fast turn-on, high accuracy (typically ±0.5%) CMOS low dropout regulator. Designed specifically ...
500mA Fixed Output / Fast Response CMOS LDO with Shutdown
500mA Fixed Output, Fast Response CMOS LDO with Shutdown
|
Microchip Technology Inc.
|
| 0263.375TX832 026301.5TX832 263.125 0263.125TX832 |
FUSE 375MA VERY FAST
Low-Input-Voltage, 300mA LDO Regulators with RESET in SOT and TDFN
FUSE 125MA VERY FAST
FUSE 750MA VERY FAST
FUSE 500MA VERY FAST
FUSE 250MA VERY FAST
FUSE 62MA VERY FAST
FUSE 3.5A VERY FAST
FUSE 5.0A VERY FAST
FUSE 3.0A VERY FAST
FUSE 2.0A VERY FAST
FUSE 1.0A VERY FAST
FUSE 4.0A VERY FAST
FUSE 2.5A VERY FAST 特快速保险丝.5a
FUSE 1.5A VERY FAST 保险.5A非常快
|
Littelfuse, Inc.
KEMET Corporation
|
| MB814400C-60 MB814400C-70 |
CMOS 1 M ×4BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
CMOS 1 M ×4 BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB814100C-60 MB814100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB814400D-60 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB8116400A-70 MB8116400A-50 MB8116400A-60 |
CMOS 4 M ×4 BIT
Fast Page Mode DRAM(CMOS 4 M ×4 位快速页面存取模式动态RAM)
CMOS 4 M ?4 BIT Fast Page Mode DRAM(CMOS 4 M ?4 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
| K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B- |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| IDT74FCT162H272CTPA IDT74FCT162H272CTPAB IDT74FCT1 |
FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER FCT SERIES, 12-BIT EXCHANGER, TRUE OUTPUT, CDFP56
FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER FCT SERIES, 12-BIT EXCHANGER, TRUE OUTPUT, PDSO56
FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER 快速CMOS 12位同步总线交换
CAP 47UF 6V 10% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-220
CAP 4.7UF 35V 20% TANT SMD-7343-31 TR-7-PL SN/PB5% LOWESR-700
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
| V53C806H V53C806H40 V53C806H45 V53C806H50 V53C806H |
High performance 1M x 8bit fast page mode CMOS dynamic RAM
HIGH PERFORMANCE 1M x 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| K4F151611 K4F151611D K4F151612D K4F171611D K4F1716 |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
