PART |
Description |
Maker |
2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier. Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 Si NPN diffused juction mesa. Medium power amplifier.
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Panasonic, Corp. Panasonic Corporation PANASONIC[Panasonic Semiconductor]
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MPSA05 MMBTA05 MPSA05RA |
NPN General Purpose Amplifier 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB NPN Medium Power Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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2SC3266 E000811 2SC3266GR 2SC3266BL |
SMALL SIGNAL TRANSISTOR, TO-92 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS From old datasheet system NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)
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Toshiba Semiconductor
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2SC3668 |
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) npn型外延式(功率放大器,开关应用) NPN EPITAXIAL TYPE (POWER AMPLIFIER/ SWITCHING APPLICATIONS)
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Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
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KSD158903 KSD1589 KSD1589YTU KSD1589RTU KSD1589OTU |
NPN Silicon Darlington Transistor Low Frequency Power Amplifier Low Speed Switching Industrial Use 5 A, 100 V, NPN, Si, POWER TRANSISTOR
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http:// FAIRCHILD SEMICONDUCTOR CORP
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2N4400 BT4400 |
NPN General Purpose Amplifier 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 NPN General Purpose Amplifier(NPN????ㄦ?澶у?
|
Fairchild Semiconductor, Corp. FAIRCHILD SEMICONDUCTOR CORP
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KSH31 KSH31C KSH31CTF KSH31TF |
NPN Epitaxial Silicon Transistor General Purpose Amplifier Low Speed Switching Applications 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252
|
Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
ASI10523 ASI1002 |
NPN Silicon RF Power Transistor Designed for General Purpose Class C Power Amplifier up to 1500 MHz(Ic: 200mA ,Vcc: 35 V)(NPN 纭??灏??????朵?绠??ㄤ????C绾ф?澶у?,棰??杈?500 MHz(Ic:200mA ,Vcc: 35 V))
|
ADVANCED SEMICONDUCTOR INC
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PU3124 PU4124 PU4424 |
V(cbo): 60V; V(ceo): 60V; V(ebo): 5V; 8A; 15W; silicon NPN triple-diffused planar darlington type power amplifier SILICON NPN TRIPLE-DIFFUSED PLANAR DARLINGTON TYPE, POWER AMPLIFIER, SWITCHING
|
Panasonic Semiconductor
|
RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
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ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
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2SC3807C |
2 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-126 NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications
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Sanyo Semicon Device
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