| PART |
Description |
Maker |
| K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY57V653220BTC-6 HY57V653220BTC HY57V653220BTC-10 |
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| T436432B-7SG T436432B-55SG T436432B-5SG T436432B-6 |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
http://
Taiwan Memory Technolog...
|
| KM432S2030C KM432S2030CT-F10 KM432S2030CT-F6 KM432 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S56323LF K4S56323LF-S K4S56323LF-R1L K4S56323LF- |
8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| T436432B-7S T436432B-7SG T436432B-55SG T436432B-6S |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM 200万32内存12k × 32 x 4Banks同步DRAM
|
TM Technology, Inc.
|
| HMC550 HT6740 HYB25S1G800TCL-37 HFV6 HY5V22LF-P HY |
GAAS MMIC SPST FAILSAFE SWITCH, DC - 6 GHz
13.56MHz RFID Transponder
MEMORY SPECTRUM
AUTOMOTIVE RELAY
4 Banks x 1M x 32Bit Synchronous DRAM
4Banks x 2M x 32bits Synchronous DRAM
3.3 VOLT HIGH-DENSITY SUPERSYNC II36-BIT FIFO
|
美国讯泰微波有限公司上海代表
Holtek Semiconductor Inc.
Infineon Technologies AG
厦门宏发电声股份有限公司
Hynix Semiconductor Inc.
Integrated Device Technology, Inc.
|
| K4S283233F K4S283233F-C K4S283233F-F1H K4S283233F- |
4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 100万x 32Bit的4银行0FBGA移动SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S28323LF K4S28323LF-ER1H K4S28323LF-F K4S28323LF |
4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 100万x 32Bit的4银行0FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4G323222A-QC/L45 K4G323222A-QC/L50 K4G323222A-QC/ |
512K x 32Bit x 2 Banks Synchronous Graphic RAM Data Sheet
32Mbit SGRAM 32兆SGRAM
|
Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4M56323PG-FHE_G75 K4M56323PG-FE_G75 K4M56323PG-FC |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Elite Semiconductor Memory Technology, Inc.
Marvell Semiconductor, Inc.
|
| IDT71V432S6PF IDT71V432S5PFI IDT71V432S7PF IDT71V4 |
32K x 32 CacheRAM 3.3V Synchronous SRAM Burst Counter Single Cycle Deselect 32K的32 CacheRAM 3.3同步SRAM的单周期脉冲计数器取
32K x 32 CacheRAM 3.3V Synchronous SRAM Burst Counter Single Cycle Deselect 32K X 32 CACHE SRAM, 5 ns, PQFP100
32K x 32 CacheRAM 3.3V Synchronous SRAM Burst Counter Single Cycle Deselect 32K X 32 CACHE SRAM, 7 ns, PQFP100
|
SRAM
Integrated Device Technology, Inc.
|
