| PART |
Description |
Maker |
| 3GWJ42C |
N SCHOTTKY BARRIEF TYPE (HIGH SPEED RECTIFIER APPLICATIONS)
|
TOSHIBA
|
| KDR720S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR367E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| DMJ2502-000 DME2029-000 |
Beam-Lead Ring Quad, N-Type Low, Medium, High Drive Schottky Diodes, Frequency Band S, C
Beam-Lead Bridge Quad, N-Type Low, Medium, High Drive Schottky Diodes, Frequency Band S, C
|
Skyworks Solutions
|
| 1SS42005 1SS420 |
Silicon Epitaxial Schottky Barrier Type High-Speed Switching Applications
|
Toshiba Semiconductor
|
| KDR729 |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC Holdings
KEC(Korea Electronics)
|
| KDR784 |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| KDR377 |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| U1GWJ49 |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE HIGH SPEED RECTIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| U3FWJ44N |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE HIGH SPEED RECTIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| KDR105S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 1SS367 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application
|
TOSHIBA
|
