| PART |
Description |
Maker |
| GT25Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| GT30J301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| GT8Q102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
|
TOSHIBA
|
| GT15J311 GT15J311SM |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| GT15J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| GT5J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
|
TOSHIBA
|
| GT15Q301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
|
TOSHIBA
|
| MC74HC32A MC74HC32AD MC74HC32ADR2 MC74HC32ADT MC74 |
Quad 2-Input OR Gate HC/UH SERIES, QUAD 2-INPUT OR GATE, PDSO14
Quad OR Gate
Quad 2-Input OR Gate High-Performance Silicon-Gate CMOS
|
ONSEMI[ON Semiconductor]
|
| S4060 S4060M S4060D S4060U |
10A sensitive-gate silicon controlled rectifier. Vrrxm, 25V.
10A sensitive-gate silicon controlled rectifier. Vrrxm, 400V.
10A sensitive-gate silicon controlled rectifier. Vrrxm, 600V.
10 AMPERE SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State
ETC[ETC]
|
| KK74AC10 KK74AC10D KK74AC10N |
Triple 3-Input NAND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| KK74HCT10A KK74HCT10AD KK74HCT10AN |
Triple 3-Input NAND Gate High-Performance Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
