PART |
Description |
Maker |
M5M29GB160BVP M5M29GB160BVP-80 M5M29GT160BVP M5M29 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY From old datasheet system 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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M5M4V4405CTP-7S M5M4V4405CTP-6S |
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM 江户(超页模式)4194304位(1048576 - Word4位)动态随机存储器
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Mitsubishi Electric, Corp.
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MR27V802D |
524288-Word x 16-Bit or 1048576-Word x 8-Bit One Time PROM 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM
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OKI electronic components OKI[OKI electronic componets]
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HM5118160 HM5116160LTT-5 HM5116160LTT-6 HM5116160L |
1048576-word x 16-bit Dynamic RAM
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Hitachi Semiconductor
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M5M51008CFP-70HI |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
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MITSUBISHI
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M5M51008KR-70XI M5M51008KR-55XI M5M51008KR-70HI M5 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
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Mitsubishi Electric Corporation
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M5M51008BFP-10VL M5M51008BFP-10VLL M5M51008BFP-12V |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
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Mitsubishi Electric Semiconductor
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MH1S72CPG-15 MH1S72CPG-10 MH1S72CPG-12 MH1S72CPG |
From old datasheet system 75497472-BIT (1048576-WORD BY 72-BIT)SynchronousDRAM
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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M5M44258-7 |
STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM
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Mitsubishi Electric Corporation
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M5M51R16AWG-10L D99015 M5M51R16AWG-15L M5M51R16AWG |
From old datasheet system 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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HM5118165BTT-8 HM5118165B HM5118165BJ-6 HM5118165B |
1048576-word x 16-bit Dynamic Random Access Memory
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HITACHI[Hitachi Semiconductor]
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