| PART |
Description |
Maker |
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| PHP206 |
Dual P-channel enhancement mode MOS transistor 5600 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
| BF1205 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| BF1203 BF1203-2015 |
Dual N-channel dual gate MOS-FET
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
| BF1203 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| SSM6E01TU |
Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) N-Channel MOS Type (Planer) Load Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
Vishay Telefunken
|
| FC6943010R |
Dual N-channel MOS FET
|
Panasonic Semiconductor
|
| 2N7002DSPT |
Dual N-Channel Enhancement MOS FET
|
Chenmko Enterprise Co. Ltd.
|
