| PART |
Description |
Maker |
| 4CX300Y 4CX300Y-8561 4CX300Y8561 |
RF amplifier
Plate Dissipation (Max.) 400 Watts Screen Dissipation (Max.) 8 Watts Grid Dissipation (Max.) 1 Watt
|
Communications & Power Industries, Inc.
List of Unclassifed Manufacturers
ETC
|
| RFP-20-100RP-S RFP-20-50RP |
Flanged Resistors 20 Watts, 50Ω
Flanged Resistors 20 Watts, 50ヘ
|
Anaren Microwave
|
| RFP-10-100RV |
Flanged Resistors 10 Watts, 100Ω
Flanged Resistors 10 Watts, 100ヘ
|
Anaren Microwave
|
| PTB20030 |
15 Watts, 42070 MHz RF Power Transistor
15 Watts, 420-470 MHz RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M N |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty
Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫，200レ拧脉冲10职务
|
MA-Com
MACOM[Tyco Electronics]
Analog Devices, Inc.
|
| 2729-170 |
170 Watts, 38 Volts, 100μs, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100渭s, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100刁, 10% Radar 2700-2900 MHz
|
MICROSEMI[Microsemi Corporation]
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| PTB20053 |
60 Watts, 86000 MHz Cellular Radio RF Power Transistor
60 Watts, 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| AVO50C-48S3V3-6L AVO50-48S2V5P-4 AVO50-48S05-4 AVO |
POWER 50 Watts
Low ripple and noise
POWER 50 Watts
|
Artesyn Technologies
|
| PTF102028 |
18 Watts, 86060 MHz GOLDMOS Field Effect Transistor
18 Watts 860-960 MHz GOLDMOS Field Effect Transistor
18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
