PART |
Description |
Maker |
1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO 16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
|
Renesas Electronics Corporation Samsung Semiconductor Co., Ltd.
|
HVC383B |
20 pF, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
HVC372B HVC372 |
Variable Capacitance Diode for VCO
|
HITACHI[Hitachi Semiconductor]
|
HVC374B |
Variable Capacitance Diode for VCO
|
HITACHI[Hitachi Semiconductor]
|
HVC397C |
Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
HVU383B |
Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
HVD355B |
Variable Capacitance Diode for VCO
|
Guangdong Kexin Industrial Co.,Ltd
|
HVL381CM |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVC362 |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVD369B |
Variable Capacitance Diode for VCO
|
Guangdong Kexin Industrial Co.,Ltd
|