| PART |
Description |
Maker |
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| 2N3440CSM4R 2N3439CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
SemeLAB
SEME-LAB[Seme LAB]
|
| 2N6212 2N6213 |
High-voltage, medium-power silicon P-N-P transistor.
|
General Electric Solid State
|
| FS3UM-10 FS3UM |
Power MOSFETs: FS Series, Medium Voltage, 500V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| RM100D2Z-40 |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| RM15TA-24 RM15TA-2H |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| ZXTP08400BFF ZXTP08400BFFTA |
400V, SOT23F, PNP medium power high voltage transistor
|
Diodes Incorporated
|
| FCX658A |
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
|
Zetex Semiconductors
|
| 2N5XXX |
(2N5xxx) High Voltage Silicon Low and Medium Power Transistors
|
Semiconductor Technology
|
| ZTX458 ZTX458STZ |
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
|
List of Unclassifed Man...
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
