| PART |
Description |
Maker |
| NTE6810 |
Integrated Circuit 128 x 8-Bit Static Random Access Memory (SRAM)
|
Maxim Integrated Products
NTE[NTE Electronics]
|
| E5530NBSP E5530H-232-S8 E5530H-232-DOW E5530H-232- |
SPECIALTY TELECOM CIRCUIT, PDSO8 SO-8
128-bit Read-only IDIC for RF Identification SPECIALTY TELECOM CIRCUIT, UUC2
CONNECTORS, PCB
Transponder IC (up to 128 bits, laser fused), ISO11784/85-compatibility (optional)
From old datasheet system
|
TEMIC SEMICONDUCTORS
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| MWA02011L MWA0204 MWA0270 MWA0211L |
I(cc): 40mA; P(in): -16 dB; V(cc): 6V; monolithic microwave integrated circuit
MONOLITHIC MICROWAVE INTEGRATED CIRCUIT 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
(MWA02011L / MWA0204 / MWA0270) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| CY7C342 CY7C342-25 CY7C342-30 CY7C342-35 CY7C342B |
128-Macrocell MAX EPLDs 128宏单元最EPLDs
128-Macrocell MAX EPLDs OT PLD, 40 ns, PQCC68
128-Macrocell MAX EPLDs OT PLD, 25 ns, PQCC68
128-Macrocell MAX EPLDs UV PLD, 40 ns, CQCC68
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
128-Macrocell MAX® EPLD
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| KA22293 KA22293Q KA2293 |
LINEAR INTEGRATED CIRCUIT
MONOLITHIC INTEGRATED CIRCUIT FOR MUSIC CENTER
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| CAT24C00JITE13 CAT24C00LETE13 CAT24C00LITE13 CAT24 |
320 x 240 pixel format, Chip-On-Glass Technology
CONNECTOR ACCESSORY
From old datasheet system
128-bit Serial EEPROM
128-bit, 100 kHz @ 1.8 V & 400 kHz @ 5.0 V, 5-pin SOT23 Package
|
Catalyst Semiconductor
|
| PEB22522 PEB22522FV21 |
MULTI BIT RATE INTEGRATED CIRCUIT
|
INFINEON[Infineon Technologies AG]
|
| NTE15023 |
Integrated Circuit dbx TV Noise Reduction Integrated Circuit
|
NTE Electronics
|
| ADADC80 |
12-Bit Successive Approximation Integrated Circuit A/D Converter
|
Analog Devices
|
| NTE3880 |
Integrated Circuit NMOS, 8-Bit Microprocessor (MPU), 4MHz
|
NTE[NTE Electronics]
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| TC74HC592AF |
CMOS Digital Integrated Circuit Silicon Monolithic 8 Bit Binary Counter
|
Toshiba Semiconductor
|
