PART |
Description |
Maker |
K7N161831B K7N163631B K7N163631B-QFCI25 K7N161831B |
512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7N161801A-QFCI25_20_16 K7N161845A-QFCI25_20_16 K7 |
512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7P161866A K7P161866A-HC25 K7P161866A-HC30 K7P1618 |
512Kx36 AND 1Mx18 Synchronous Pipelined SRAM
|
Samsung semiconductor
|
K7N163645AK7N163245AK7N161845A |
512Kx36/32 & 1Mx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
K7Q163682A K7Q161882 K7Q161882A |
512Kx36 & 1Mx18 QDR b2 SRAM 512Kx36 512Kx36 & 1Mx18 QDR b2 SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K7N161831B-QFCI25 K7N163631B-QFCI25 |
512Kx36 & 1Mx18 Pipelined NtRAM
|
Samsung semiconductor
|
K7N803601B K7N803649B-QC25 DS_K7N803601B K7M801825 |
512Kx36 & 1Mx18 Pipelined NtRAM 256Kx36 & 512Kx18-Bit Flow Through NtRAM 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes 256Kx36 & 512Kx18-Bit Pipelined NtRAM 256Kx36
|
http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7A161830B K7A163630B |
512Kx36 & 1Mx18 Synchronous SRAM
|
SAMSUNG ELECTRONICS
|
K7M163635B-PC65 K7M163635B-PI65 K7M163635B-QI65 K7 |
512Kx36 & 1Mx18 Flow-Through NtRAM
|
Samsung semiconductor
|
K7K1636U2C K7K1618U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
K7Q161862B |
(K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|