| PART |
Description |
Maker |
| AM42DL1614DT45IT AM42DL1614DB45IT AM42DL1614DB35IT |
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM Am29DL16xD 16兆位2米8 1个M x 16位）.0伏的CMOS只，同时作业闪存兆位256亩16位），静态存储器
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM Am29DL16xD 16兆位米8 1个M x 16位）.0伏的CMOS只，同时作业闪存兆位56亩16位），静态存储器
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA69
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| M420000061 AM42DL3224GB25IT AM42DL3224GB30IT AM42D |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| PCD5101 |
256 X 4-Bit Static RAM
|
Signetics
|
| P93U422-35FMB P93U422-35PMB P93U422-35SMB |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor, Corp.
Microchip Technology, Inc.
|
| CAT22C10 CAT22C10LE20 CAT22C10LE30 CAT22C10LI20 CA |
256-Bit Nonvolatile CMOS Static RAM
|
ON Semiconductor
|
| AM42DL6404G AM42DL6404G85IS AM42DL6404G85IT AM42DL |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
|
SPANSION[SPANSION]
AMD[Advanced Micro Devices]
|
| NM93C06EM8 NM93C06EMT8 NM93C06EN NM93CS06EMT8 NM93 |
256-Bit Serial CMOS EEPROM (MICROWIRE?/a> Synchronous Bus)
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
Card Edge Connector; No. of Contacts:40; Pitch Spacing:0.1" RoHS Compliant: Yes
256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
256-BIT SERIAL CMOS EEPROM (MICROWIRE⒙ SYNCHRONOUS BUS)
256-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus)
256-Bit Serial CMOS EEPROM (MICROWIRE?Synchronous Bus)
|
Fairchild Semiconductor, Corp.
EEPROM
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IS61LV25616 IS61LV2561 IS61LV25616-10T IS61LV25616 |
256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
ASYNCHRONOUS STATIC RAM
256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256 × 16高速异步的CMOS静态RAM.3V电源
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
Integrated Silicon Solution, Inc.
|
| IDT70T3589S-200DRI IDT70T3589S-133BF IDT70T3589S-1 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 2.5V56/128/64K × 36 SYNCHRONOU S双，端口静态RAM.5V的接
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
|
Integrated Device Technology, Inc.
|
| IDT728980 IDT728980J IDT728980J8 |
256 x 256 TSI, 8 I/O at 2Mbps, Variable Delay, 5.0V
TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256
|
IDT[Integrated Device Technology]
|
| IDT72V8980 IDT72V8980DB IDT72V8980J IDT72V8980PV I |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256
256 x 256 TSI, 8 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology
IDT
|
| CY7C1041BNV33L-12ZXC |
256 K 16 Static RAM
|
Cypress
|
