| PART |
Description |
Maker |
| BS250 |
DMOS Transistors (P-Channel)
DMOS Transistor (P-Channel)
|
GE Security, Inc.
GE[General Semiconductor]
|
| 2N7000 |
DMOS Transistors (N-Channel)
|
http://
GE[General Semiconductor]
|
| BS209 |
DMOS Transistors (P-Channel)(P通道DMOS晶体
|
GE Security, Inc.
General Semiconductor
|
| BS208 |
DMOS Transistors (P-Channel)(P通道DMOS晶体
|
GE Security, Inc.
General Semiconductor
|
| BS809 |
DMOS Transistors (N-Channel)(N通道DMOS晶体 DMOS晶体管（N沟道）（不适用通道的DMOS晶体管）
|
General Semiconductor
GE Security, Inc.
|
| STN4488L |
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| STN9926AA |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
| TDA7296V TDA7296 |
70V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY 70V 60瓦的DMOS音频放大器静意法半导体，
60V-60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY
|
STMicroelectronics N.V.
ST Microelectronics
意法半导
SGS Thomson Microelectronics
|
| D1024UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSHPULL 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH-PULL
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| DCX123JU-7-F DCX143EU DCX143EU-7-F DCX114YU-7-F DC |
Prebiased Transistors
Discrete - Bipolar Transistors - Pre-Bias Transistors
|
Diodes
|
| ST2304SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ST2302MSRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
