| PART |
Description |
Maker |
| AT45BR3214B AT45BR3214B-C1 |
32-MEGABIT DATAFLASH 4-MEGABIT SRAM STACK MEMORY
|
ATMEL Corporation
|
| ACT-F1288N ACT-F1288N-150P7T ACT-F1288N-150P7Q ACT |
High speed 1 Megabit monolithic FLASH. Speed 150ns.
High speed 1 Megabit monolithic FLASH. Speed 90ns.
High speed 1 Megabit monolithic FLASH. Speed 70ns.
ACT-F128K8 High Speed 1 Megabit Monolithic FLASH
High speed 1 Megabit monolithic FLASH. Speed 60ns.
High speed 1 Megabit monolithic FLASH. Speed 120ns.
|
AEROFLEX[Aeroflex Circuit Technology]
|
| S29GL064N11BAIV10 S29GL064N11FAIV12 S29GL064N11BFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 64兆，32兆位3.0伏只页面模式闪存具有110纳米MirrorBit工艺技
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc.
PROM
Spansion, Inc.
SPANSION LLC
|
| AM27C040 AM27C040-120 AM27C040-120DCB AM27C040-120 |
4 Megabit (512 K x 8-Bit) CMOS EPROM
SEAL,NEOPRENE,CYLINDRICAL CONNECTR& 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 120 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 4兆位12亩8位）的CMOS存储
Dual 4-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 150 ns, CDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 512K X 8 OTPROM, 120 ns, PDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-PDIP 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 150 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 120 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 90 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PQCC32
MEMORY KEY, USBFTV, SEALED, 1GB; Colour:Green; Series:USB FTV RoHS Compliant: No
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| S29GL032N90FFIV22 S29GL064N11BFI030 S29GL064N11BAI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
|
SPANSION
http://
|
| AT45CS1282 |
128 Megabit Code Shadow Flash
128-megabit 2.7-volt Dual-interface Code Shadow DataFlash
|
ATMEL[ATMEL Corporation]
|
| S29CD016G0MFFA202 S29CD016G0MFAA212 S29CD016G0JFAI |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位）6兆位12k × 32的位），2.5伏，只有突发模式，双启动，同步读/写闪存与VersatileI内存/输出
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位）6兆位512k × 32的位），2.5伏，只有突发模式，双启动，同步读/写闪存与VersatileI内存/输出
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 512K X 32 FLASH 2.7V PROM, 67 ns, PBGA80
|
Spansion Inc.
Spansion, Inc.
|
| AT49HF010 AT49HF010-45JC AT49HF010-45JI AT49HF010- |
1-Megabit (128K x 8) 5-volt only CMOS flash memory, 40mA active, 0.3mA standby
THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:3kR; Tolerance, resistance: /-1%; Beta value:3988; Temperature, lower limit, beta
DB25SC37
DSUB
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PDIP32
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PQCC32
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| AT49SV802A-90TI AT49SV802A-90CU |
8-megabit 1.8-volt Only Flash Memory 8兆位1.8伏，只有闪存
8-megabit 1.8-volt Only Flash Memory 512K X 16 FLASH 1.8V PROM, 90 ns, PBGA48
|
Atmel, Corp.
ATMEL Corporation
|
| AT49F008A-90CC AT49F008A-90CI AT49F008A-90TC AT49F |
90ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
70ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
120ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
x8 Flash EEPROM x8闪存EEPROM
x8/x16 Flash EEPROM
|
Atmel, Corp.
|
| ACT-PS512K8W-012L2I ACT-PS512K8Y-017L2T ACT-PS512K |
High speed 4 Megabit plastic monolithic SRAM. Options burn-in. Speed 12ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 17ns.
High speed 4 Megabit plastic monolithic SRAM. Options none. Speed 10ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle. Speed 15ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 25ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 20ns.
|
Aeroflex Circuit Technology
|
| 28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
|
Maxwell Technologies, Inc
|
