| PART |
Description |
Maker |
| GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns
4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
|
Hynix Semiconductor
|
| MB814100C-60 MB814100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB8116160A-70 |
CMOS 1 M ×16 BIT
Fast Page Mode DRAM(CMOS 1 M ×16 位快速页面存取模式动态RAM)
CMOS 1 M ?16 BIT Fast Page Mode DRAM(CMOS 1 M ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
| MB81V4100C-60 MB81V4100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB814400A-80 MB814400A-60 MB814400A-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB814400C-60 MB814400C-70 |
CMOS 1 M ×4BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
CMOS 1 M ×4 BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| ST62E30BF1 ST6230BM1/XXX ST62P30BM3/XXX ST62P30BM6 |
MICROCONTROLLER|8-BIT|ST6200 CPU|CMOS|DIP|28PIN|CERAMIC
MICROCONTROLLER|8-BIT|ST6200 CPU|CMOS|SOP|28PIN|PLASTIC
IC, 60FBGA, 512MBIT DDR DRAM 60 PIN BGA 32MBX16
MICROCONTROLLER|8-BIT|ST6200 CPU|CMOS|DIP|28PIN|PLASTIC
IC, MEM, SDRAM DDR166, 32 MEG X 16, 16 BIT, 6NS, 2.5V, FBGA60 单片机| 8位| ST6200的CPU |的CMOS |专科| 28脚|塑料
|
Black Box, Corp.
|
| HY5117400 |
4M x 4-Bit CMOS DRAM
|
Hyundai Electronics
|
| MB814400A-70PFTN |
CMOS 4M-Bit DRAM
|
ETC
|
| HY514400A |
1M x 4-Bit CMOS DRAM
|
Hynix Semiconductor
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
