PART |
Description |
Maker |
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
NE5550779A-T1A NE5550779A-T1-A NE5550779A-T1A-A |
Silicon Power LDMOS FET
|
Renesas Electronics Corporation
|
BLC6G22-100 BLC6G22LS-100 BLC6G22-130 |
UHF power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
LB401 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
LP802 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
L2711 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
L2821 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
LR301 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|