PART |
Description |
Maker |
MX29F200BMC-70 MX29F200TTC-70 MX29F200TTI-90 MX29F |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
W27C02-70 W27C02 W27C02Q-70 W27C02P-70 |
EPROM 存储 EEPROM|256KX8|CMOS|TSSOP|32PIN|PLASTIC EEPROM|256KX8|CMOS|LDCC|32PIN|PLASTIC 256K X 8 ELECTRICALLY ERASABLE EPROM NVM > EPROM EEPROM|256KX8|CMOS|DIP|32PIN|PLASTIC
|
Winbond Electronics, Corp.
|
MX27L2000TI-25 27L2000-12 27L2000-15 27L2000-20 27 |
2M-BIT [256Kx8] CMOS EPROM
|
MCNIX[Macronix International]
|
N02L1618C1AT2-70I N02L1618C1A N02L1618C1AB N02L161 |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
MX27C2100 MX27C2048 27C2100 |
2M-BIT [256Kx8/128x16] CMOS EPROM From old datasheet system
|
Macronix 旺宏
|
MX27L2000 27L2000 MAX27L2000 MX27L2000DC-20 MX27L2 |
2M-BIT [256Kx8] CMOS EPROM From old datasheet system
|
Macronix 旺宏 MXIC MCNIX[Macronix International]
|
BS62UV2006 BS62UV2006TIP85 BS62UV2006DC BS62UV2006 |
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit 超低功率/电压CMOS SRAM56K × 8 1-To-8 (4 Same Frequency, 4 Divide-By-2) Clock Driver With Clear 20-SSOP Asynchronous 2M(256Kx8) bits Static RAM
|
Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
BS616UV2019 BS616UV2019TIP85 BS616UV2019AC BS616UV |
Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit 超低功率/电压CMOS SRAM28K的16 020419-0023 超低功率/电压CMOS SRAM28K的16 Hex Buffer/Driver With Open-Drain Outputs 14-SOIC -40 to 85 JT 55C 55#20 SKT PLUG Asynchronous 2M(128Kx16) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
IS24C02 IS24C08 IS24C04 IS24C01 24C16 IS24C16-3PI |
16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM From old datasheet system 301K 1% 100PPM TF 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 RES 2.7 OHM 5% 0.1 W METAL FILM SMT 0805 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 1K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 2K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 RESISTOR,309,CR0805 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2线串行EEPROM中的CMOS
|
Integrated Silicon Solu... Integrated Silicon Solution Inc ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution, Inc. Integrated Silicon Solution...
|
E0C6SB32Q14 E0C6S32 |
4-Bit Microcontroller Advanced Single-Chip CMOS 4-Bit Microcomputer Consisting of the E0C6200A 4-Bit CMOS Core CPU,SVD Circuit/Comparator,Event Counter(4位高级的、CMOS、单片微型计算机(含4位E0C62000A中央处理器核SVD电路/比较事件计数器))
|
爱普生(中国)有限公
|
M38047M6-XXXFP M38047M6-XXXHP M38047M6-XXXSP M3804 |
3803/04 Group: General Purpose, with Flash RAM size: 256bytes; single-chip 8-bit CMOS microcomputer RAM size: 640bytes; single-chip 8-bit CMOS microcomputer RAM size: 896bytes; single-chip 8-bit CMOS microcomputer RAM size: 512bytes; single-chip 8-bit CMOS microcomputer RAM size: 768bytes; single-chip 8-bit CMOS microcomputer RAM size: 384bytes; single-chip 8-bit CMOS microcomputer RAM size: 1024bytes; single-chip 8-bit CMOS microcomputer RAM size: 2048bytes; single-chip 8-bit CMOS microcomputer RAM size: 1536bytes; single-chip 8-bit CMOS microcomputer RAM size: 192bytes; single-chip 8-bit CMOS microcomputer Single Chip 8-bit Microcomputer
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Mitsubishi Electric Corporation
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