PART |
Description |
Maker |
KMM5324004CSWG KMM5324004CSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM5364003CSW KMM5364003CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
KMM5368003BSWG KMM5368003BSW |
8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM372F804BS |
8M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
|
Samsung Electronic Samsung semiconductor
|
KMM5361203C2W |
1M x 36 DRAM SIMM(1M x 36 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KMM5322200C2W |
2MBx32 DRAM Simm Using 1MBx16
|
Samsung Semiconductor
|
KMM5328004CSW |
8MB X 32 DRAM Simm Using 4MB X 16
|
Samsung Semiconductor
|
KMM5328000BSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
KMM53616004CK |
16MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|
KMM53616004BK |
16MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|
KMM53232004BK KMM53232004BKG |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|