PART |
Description |
Maker |
KMM5364005CSW KMM5364005CSWG |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
SAMSUNG[Samsung semiconductor]
|
M372V0405DT0-CFASTPAGEMODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM 8ns 1M x 4 4Mb asynchronous SRAM 12ns 1M x 4 4Mb asynchronous SRAM
|
http:// GSI Technology
|
GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM 12ns 256K x 18 4Mb sync burst SRAM 8.5ns 256K x 18 4Mb sync burst SRAM 8ns 256K x 18 4Mb sync burst SRAM 10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
M58CR064-ZBT M58CR064Q90ZB6T M58CR064CZB M58CR064D |
64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory 64兆位4Mb的16,双行,突发1.8V电源快闪记忆 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory 64 MBIT (4MB X16, DUAL BANK, BURST) 1.8V SUPPLY FLASH MEMORY 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
|
STMicroelectronics N.V. 意法半导 ST Microelectronics
|
GS840FH18AGT-8 GS840FH18AT-8.5 GS840FH18AT-8.5I GS |
4Mb Burst SRAMs 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
M27W064-110N1T M27W064 M27W064-100M1T M27W064-100N |
64 Mbit 4Mb x16 3V Supply FlexibleROM Memory 64 MBIT (4MB X16) 3V SUPPLY FLEXIBLEROM MEMORY 64 MBIT (4MB X16) 3V SUPPLY FLEXIBLEROM?MEMORY 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory 64 Mbit 4Mb x16 3V Supply FlexibleROM⑩ Memory
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
GS74108ATJ |
512K x 8 4Mb Asynchronous SRAM
|
GSI Technology
|
GS74117AX-8I GS74117AX GS74117AX-10 GS74117AX-10I |
256K x 16 4Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
ST6232BQ3/XXX |
4Mb Boot Block Flash 8位微控制
|
STMicroelectronics N.V.
|
M29W320EB70N1 M29W320EB70N1E M29W320EB90N6T M29W32 |
32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位Mb的x8或功能的2Mb x16插槽,引导块V电源快闪记忆
|
STMicroelectronics N.V. ST Microelectronics
|