PART |
Description |
Maker |
IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A) Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A) Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A) -200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
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IRFL210 IRFL210TR |
200V Single N-Channel HEXFET Power MOSFET in a SOT-223 package Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.96A)
|
International Rectifier
|
APT20M38SVR APT20M38SVRG |
200V 67A 0.038W Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 67A 0.038 Ohm
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Microsemi Corporation ADPOW[Advanced Power Technology]
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IRF9610 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A) Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
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IRF[International Rectifier]
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IRFI630G IRFI630 IRFI630GPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A) HEXFET? Power MOSFET Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=5.9A)
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IRF[International Rectifier]
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MRF6S9060NR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060M |
RF Power Field Effect Transistors CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 CAP CER .10UF 100V 20% AXIAL
|
Freescale (Motorola) 飞思卡尔半导体(中国)有限公司
|
IRFU210 IRFR210 IRFU210PBF IRFR210TRL IRFR210TRR |
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package 200V Single N-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=2.6A)
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IRF[International Rectifier]
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IRFP240 IRFP250NPBF IRFP240PBF |
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=20A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rdson)\u003d 0.18ohm,身份证\u003d 20A条) HEXFET? Power MOSFET 200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRHNA57260 IRHNA54260 IRHNA58260 IRHNA57060 IRHNA5 |
200V N-CHANNEL RADIATION HARDENED POWER MOSFET 200V, N-CHANNEL
|
IRF[International Rectifier]
|
FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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