| PART |
Description |
Maker |
| IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A)
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| IRG4PSH71U IRG4PSH71UPBF |
99 A, 1200 V, N-CHANNEL IGBT
INSULATED GATE BIPOLAR TRANSISTOR
1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package
|
IRF[International Rectifier]
|
| NGTG30N60FLWG |
Insulated Gate Bipolar Transistor (IGBT)
|
ON Semiconductor
|
| IRGPC50KD2 IRGPC50KD2-EPBF |
52 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
600V Copack IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| GT40T302 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| IRG4PC50FPBF |
Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| GT60M303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
Toshiba Semiconductor
|
| IRG4BC40SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
|
IRF[International Rectifier]
|
