| PART |
Description |
Maker |
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| IS42S16100C1-6T IS42S16100C1-5T IS42S16100C1-5TL I |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Integrated Silicon Solution, Inc.
天津新技术产业园区管理委员会
|
| HYB39S64160ATL HYB39S64160AT HYB39S64800 |
64 MBit Synchronous DRAM
|
Infineon
|
| IS42LS16800A-10TI IS42S81600A-7T IS42LS81600A-7TI |
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:350VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Capacitance:2400uF RoHS Compliant: Yes
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg × 8Meg x16
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Circuit Solu...
Integrated Silicon Solution, Inc.
Intersil, Corp.
Integrated Circuit Solution...
|
| HYB39SC256160FE-6 HYB39SC256160FE-7 HYB39SC256160F |
256-MBit Synchronous DRAM
|
Qimonda AG
|
| HYB39S512400AE-7.5 HYB39S512800AE-7.5 HYB39S512160 |
512-Mbit Synchronous DRAM
|
Qimonda AG
|
| HYB39SC256 HYB39SC256800FF-7 |
256-MBit Synchronous DRAM
|
Qimonda AG
|
| HYB39S128160FE HYB39S128160FEL |
128-MBit Synchronous DRAM
|
Qimonda
|
| IS42S16400E-7T IS42S16400E-6TLI IS42S16400E-7TL IS |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| IS45S32400B-7TLA IS45S32400B-7TLA1 IS45S32400B-6TL |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
| Q67100-Q1337 HB39S16A HYB39S16160AT-10 HYB39S16160 |
From old datasheet system
16 MBit Synchronous DRAM
|
SIEMENS[Siemens Semiconductor Group]
|
