| PART |
Description |
Maker |
| HYM364020GS-60 HYM364020S-60 Q67100-Q982 HYM364020 |
4M x 36-Bit Dynamic RAM Module 4M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
4M x 36 Bit FPM DRAM Module with Parity
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| HYM72V1610GS-60 |
16M x 72 Bit ECC FPM DRAM Module buff...
|
Infineon
|
| AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
5V 256KX16 CMOS DRAM (EDO)
5V 256K?6 CMOS DRAM (EDO)
x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO)
5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation
ALSC
|
| AS4C4M4 |
16M FPM DRAM
|
Austin Semiconductor
|
| HY534256A HY534256AJ HY534256ALJ HY534256ALS HY534 |
256K x 4-bit CMOS DRAM
|
HYNIX[Hynix Semiconductor]
|
| AM90CL255-08JC AM90CL255-15JC AM90CL255-12PC |
256K X 1 NIBBLE MODE DRAM, 80 ns, PQCC18
256K X 1 NIBBLE MODE DRAM, 150 ns, PQCC18
256K X 1 NIBBLE MODE DRAM, 120 ns, PDIP16
|
ADVANCED MICRO DEVICES INC
|
| HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY |
256k x 16 Bit EDO DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| KM44C258BJ-8 KM44C258BP-8 KM44C258BP-7 KM44C258BZ- |
256K X 4 STATIC COLUMN DRAM, 80 ns, PDSO20
256K X 4 STATIC COLUMN DRAM, 80 ns, PDIP20
256K X 4 STATIC COLUMN DRAM, 70 ns, PDIP20
256K X 4 STATIC COLUMN DRAM, 80 ns, PZIP19
|
|
| AS4LC256K16EO |
3.3V 256K×16 CMOS DRAM (EDO)(3.3V 256K×16 CMOS动态RAM（扩展数据总线
|
Alliance Semiconductor Corporation
|
| HM514260AJ-7 HM514260ALJ-7 HM514260ALZ-10 |
256K X 16 FAST PAGE DRAM, 70 ns, PDSO40
256K X 16 FAST PAGE DRAM, 100 ns, PZIP40
|
|
