Part Number Hot Search : 
96KFKE MLX902 22374A TC7109 10001 HPX015AS MC13109A DS1228S
Product Description
Full Text Search

BSM10GD120DN2 - IGBT Power Module From old datasheet system

BSM10GD120DN2_472210.PDF Datasheet

 
Part No. BSM10GD120DN2 010D12N2
Description IGBT Power Module
From old datasheet system

File Size 121.50K  /  9 Page  

Maker

Infineon



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: BSM10GD120DN2
Maker: EUPEC
Pack: 模块
Stock: Reserved
Unit price for :
    50: $53.54
  100: $50.86
1000: $48.18

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ BSM10GD120DN2 010D12N2 Datasheet PDF Downlaod from Datasheet.HK ]
[BSM10GD120DN2 010D12N2 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for BSM10GD120DN2 ]

[ Price & Availability of BSM10GD120DN2 by FindChips.com ]

 Full text search : IGBT Power Module From old datasheet system


 Related Part Number
PART Description Maker
IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c
IXYS, Corp.
MG400J2YS60A GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
From old datasheet system
Toshiba Semiconductor
MIG100J7CSB1W MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
APTGF90A60T1G 110 A, 600 V, N-CHANNEL IGBT
Phase leg NPT IGBT Power Module
MICROSEMI POWER PRODUCTS GROUP
Microsemi Corporation
APTGT100DH60TG Asymmetrical - Bridge Trench Field Stop IGBT Power Module 150 A, 600 V, N-CHANNEL IGBT
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
APTGT200DH60G Asymmetrical - Bridge Trench Field Stop IGBT Power Module 290 A, 600 V, N-CHANNEL IGBT
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
APTGT200H120G Full - Bridge Fast Trench Field Stop IGBT Power Module 280 A, 1200 V, N-CHANNEL IGBT
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
APTGT200DH120G Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module 280 A, 1200 V, N-CHANNEL IGBT
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
APTGT100DU60TG Dual common source Trench Field Stop IGBT Power Module 150 A, 600 V, N-CHANNEL IGBT
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
MIG300J101H Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Toshiba Semiconductor
 
 Related keyword From Full Text Search System
BSM10GD120DN2 Dual BSM10GD120DN2 Transistors BSM10GD120DN2 max BSM10GD120DN2 system BSM10GD120DN2 filetype:pdf
BSM10GD120DN2 datasheet | даташит BSM10GD120DN2 stock BSM10GD120DN2 panasonic BSM10GD120DN2 Operation BSM10GD120DN2 electric
 

 

Price & Availability of BSM10GD120DN2

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.64164781570435