| PART |
Description |
Maker |
| AT28BV64 AT28BV64-30SI AT28BV64-30PC AT28BV64-30PI |
64K 8K x 8 Battery-Voltage CMOS E2PROM
64K (8K x 8) Battery-Voltage CMOS
From old datasheet system
|
ATMEL[ATMEL Corporation]
|
| AT27BV1024-12JC AT27BV1024-90VI AT27BV1024 AT27BV1 |
1 Megabit 64K x 16 Unregulated Battery-Voltage High Speed OTP CMOS EPROM 64K X 16 OTPROM, 90 ns, PDSO40
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AT28C64-25 AT28C64-20 AT28C64E-1 AT28C64E-12PI AT2 |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 250 ns, PDSO28
8-Bit Shift Registers With 3-State Output Registers 16-TSSOP -40 to 85 8K X 8 EEPROM 5V, 250 ns, PQCC32
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SOIC -40 to 85 8K X 8 EEPROM 5V, 250 ns, UUC27
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 150 ns, PDSO28
Dual Positive-Edge-Triggered D-Type Flip-Flops 14-SSOP -40 to 85 8K X 8 EEPROM 5V, 250 ns, PDSO28
64K (8K X 8) CMOS E2PROM
64K 8K x 8 CMOS E2PROM
|
Atmel, Corp.
PROM
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| CAT24WC32LE1.8TE13B CAT24WC32PE1.8TE13B CAT24WC32W |
64K 8K x 8 Battery-Voltage CMOS E2PROM 64K8K的8电池电压的CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
|
EEPROM
BCD Semiconductor Manufacturing, Ltd.
Vishay Intertechnology, Inc.
Samtec, Inc.
|
| IS62WV6416DALL/DBLL IS65WV6416DALL/DBLL IS62WV6416 |
64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
64K X 16 STANDARD SRAM, 35 ns, PBGA48
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| CY27H512-30JC CY27H512-30WC CY27H512-35HC CY27H512 |
64K x 8 High-Speed CMOS EPROM
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 25 ns, PDSO28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, PDSO28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 30 ns, PDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 55 ns, CDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, CDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CQCC32
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 70 ns, CQCC32
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDSO28
CAP SM CER 2200PFD 50V 10% X7R 0805
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY7C4271V-15JC CY7C4271V-15JI CY7C4271V-25JC CY7C4 |
16Kx9 Low Voltage Deep Sync FIFOs(16Kx9低压深同步先进先出（FIFO
16K/32K/64K/128K x 9 Low-Voltage Deep Sync⑩ FIFOs
16K/32K/64K/128K x 9 Low-Voltage Deep Sync FIFOs
16K/32K/64K/128K x 9 Low-Voltage Deep Sync?/a> FIFOs
16K/32K/64K/128K x 9 Low-Voltage Deep Sync?FIFOs
|
Cypress Semiconductor Corp.
|
| W27C520S-70 W27C520 W27C520W-90 W27C520S-90 W27C52 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20
BOX 2.53X1.73X.65 W/4 BTNS ALMOND 64K X 8 EEPROM 3V, 90 ns, PDSO20
From old datasheet system
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
