| PART |
Description |
Maker |
| AK2358A |
Base Band LSI
|
Asahi Kasei Microsystems
|
| NJW2303 NJW2303F |
Base Band Interface IC(?ㄤ???发?佃????甯???ｈ???
|
New Japan Radio Co., Ltd.
NJRC[New Japan Radio]
|
| AD6652 |
12-Bit, 65 MSPS IF to Base Band Diversity Receiver
|
Analog Devices
|
| LC80101M |
VICS LSI
CMOS LSI
Special-Purpose Descrambler LSI for Use In VICS Systems.(用于VICS系统的特殊用途密码器LSI)
|
Sanyo Semicon Device
Sanyo Electric Co.,Ltd.
|
| LC74751 2086 |
On-Screen Display LSI
From old datasheet system
CMOS LSI
|
SANYO[Sanyo Semicon Device]
|
| LC8955 |
CMOS LSI
CD-1 Format ADPCM Data Replay LSI
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| MS3023 |
2.0 GHz, Class C, Common Base; fO (MHz): 0; P(out) (W): 3; P(in) (W): 0.5; Gain (dB): 7.8; Vcc (V): 28; Cob (pF): 9.5; Case Style: M210 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| EM34006A |
Single-Chip LSI CMOS Calculator with 12-Digits 2-Memory or 10-Digits 2-Memory(???LSI CMOS璁℃????甯?2浣?瀛???ㄦ?10浣?瀛?????)
|
ELAN Microelctronics Corp .
|
| 8V44N4614 |
Clock generator for wireless base-band systems
|
Integrated Device Techn...
|
