| PART |
Description |
Maker |
| M39832 M39832NE 6468 M39832-B12WNE1T M39832-B12WNE |
Single Chip 8 Mbit (1Mb x8 or 512Kb x16) Flash and 256 Kbit Parallel EEPROM Memory
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory
From old datasheet system
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628 |
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
|
SAMSUNG[Samsung semiconductor]
|
| HY29DS323 HY29DS322 HY29DS323BF-10 HY29DS322BF-12 |
EEPROM EEPROM
32 MEGABIT (4M X 8/2M X16) SUPER-LOW VOLTAGE, DUAL BANK, SIMULTANEOUS READ/WRITE, FLASH MEMORY
|
Hynix Semiconductor, Inc.
|
| HY29F400BT-55 HY29F400BR-90 HY29F400BT-70 HY29F400 |
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 4兆位12Kx8/256Kx16伏只闪存
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 45 ns, PDSO48
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| TH58100FT |
128M X 8 EEPROM 3V, PDSO48
|
|
| TC58NVG0S3AFT05 |
1 GBIT (128M × 8 BITS) CMOS NAND EEPROM
|
Toshiba.
Toshiba Semiconductor
|
| AT49LV4096A-70CC AT49BV4096A-11CI AT49LV4096A-70RC |
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Atmel, Corp.
|
| AM29LV200BB-55RFI AM29LV200BB-55RSI AM29LV200BB-12 |
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Advanced Micro Devices, Inc.
|
| TMS28F210-12C3DBWL TMS28F210-12C3DBWQ TMS28F210-12 |
x16 Flash EEPROM x16闪存EEPROM
|
HIROSE ELECTRIC Co., Ltd.
|
| WE128K16-250CC WE128K16-150CM WE128K16-150CC |
x16 EEPROM Module x16的EEPROM模块
|
PATLITE, Corp.
|
| TMS28F210-10C3NE TMS28F210-17C4NL4 TMS28F210-12C4F |
x16 Flash EEPROM x16闪存EEPROM
|
Toshiba, Corp.
Piher Sensors ?Controls SA
|
| DPZ256X16IH3-17C DPZ256X16IH3-17I DPZ256X16IH3-17B |
x16 Flash EEPROM Module x16闪存EEPROM模块
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Power-One, Inc.
AVX, Corp.
Vicor, Corp.
|
