| PART |
Description |
Maker |
| KM641003B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| V53C8256H35 |
ULTRA-HIGH SPEED, 256K X 8 FAST PAGE MODE CMOS DYNAMIC RAM 超高速，256K × 8快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| IDT70V7519S IDT70V7519S166DR IDT70V7519S200BF |
HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56K × 36 SYNCHRONOU开户银行可切换双端口静态RAM.5V的接
|
Integrated Device Technology, Inc.
|
| P3C1041-10TI P3C1041-10TC P3C1041-10JC P3C1041-10J |
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 10 ns, PDSO44
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Pyramid Semiconductor, Corp.
|
| AM29SL400CT100REI AM29SL400CT150WAF AM29SL400CB120 |
CAP 150UF 4V 20% TANT SMD-7343-30 TR-7
M16C Series, 6N4 Group, 3-ch IEBus, 3-phase PWM, CRC 100P6Q-A; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PLQP0100KB-A
High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
High Speed CMOS Logic Octal InvertingTransparent Latch with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
High Speed CMOS Logic Octal Positive-Edge Triggered D-Type Flip-Flops with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
High Speed CMOS Logic 12-Stage Binary Counter 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 110 ns, PDSO48
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
|
Spansion Inc.
Spansion, Inc.
Xicon Passive Components
Amphenol, Corp.
|
| AT27BV256-90TI AT27BV256 AT27BV256-12JC AT27BV256- |
High Speed CMOS Logic Dual 4-Stage Binary Counters 14-SOIC -55 to 125 32K X 8 OTPROM, 150 ns, PDSO28
High Speed CMOS Logic Dual 4-Input NOR Gates 14-SOIC -55 to 125
High Speed CMOS Logic Dual Decade Ripple Counters 16-SOIC -55 to 125
High Speed CMOS Logic Dual 4-Input NOR Gates 14-PDIP -55 to 125
256K 32K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| EM614163 EM614163A EM614163A-30 EM614163A-35 EM614 |
256K X 16 HIGH SPEED EDO DRAM
|
ETC[ETC]
|
| LY61L2568 LY61L2568LL LY61L2568ML LY61L2568MV LY61 |
256K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
