PART |
Description |
Maker |
IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. Power MOS Field-Effect Transistors N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State GE Solid State
|
NIF62514-D |
HDPlus N-Channel Self-protected Field Effect Transistors w/ Temperature and Current Limit
|
ON Semiconductor
|
J113 J112 J111 |
RES CURRENT SENSE .005 OHM .75W N-channel silicon field-effect transistors
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor MOTOROLA[Motorola, Inc]
|
2SJ104 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
|
TOSHIBA
|
2SK363 |
Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
|
TOSHIBA
|
1PMT5300 1PMT5313 1PMT5311 1PMT5314 1PMT5312 1PMT5 |
Current Limiter Diode
|
Microsemi
|
SMAJ5304 SMAJ5305 SMAJ5309 SMAJ5303 SMAJ5307 SMAJ5 |
Current Limiter Diode
|
Microsemi
|
STIL08-T5 STIL04 |
AC INRUSH CURRENT LIMITER
|
ST Microelectronics
|
MSP5286-1 MSP5288-1 MSP5294-1 SMBJ5304 MSP5287-1 M |
Current Limiter Diode
|
Microsemi
|