| PART |
Description |
Maker |
| TGA1342 TGA1342-EPU |
2 -20 GHz Wideband AGC Amplifier 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
TriQuint Semiconductor, Inc.
TRIQUINT[TriQuint Semiconductor]
|
| SMA3101 |
Silicon MMIC Wideband Amplifi er
|
Sanyo Semicon Device
|
| EVAL-ADG936EB ADG936 ADG936BCP ADG936BCP-500RL7 AD |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT 宽带4千兆赫，36千兆赫的CMOS 1.65 V分贝.75 V的隔离，双路SPDT
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC20
|
AD[Analog Devices]
Analog Devices, Inc.
ANALOG DEVICES INC
|
| PTMC210204MD |
Wideband LDMOS Two-stage Integrated Power Amplifi er 20 W, 28 V, 1805 ?2200 MHz
|
Infineon Technologies A...
|
| TGA2509 |
Wideband 1W HPA with AGC
|
TriQuint Semiconductor, Inc.
|
| MGA-22103 MGA-22103-TR1G |
2.5-2.7 GHz WiMAX Power Amplifi er Module
|
AVAGO TECHNOLOGIES LIMITED
|
| ADW54011Z-0REEL7 EVAL-ADG904EBZ EVAL-ADG904REBZ |
Wideband 2.5 GHz, 37 dB Isolation at 1 GHz, CMOS 1.65V to 2.75V, 4:1 Mux/SP4T
|
Analog Devices
|
| ADG901BCP-500RL7 ADG901BCP-REEL7 ADG901BRM ADG901B |
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, Absorptive/Reflective Switches
Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches
|
Analog Devices, Inc.
|
| HMC287MS8 |
GaAs MMIC LOW NOISE AMPLIFIER with AGC, 2.3 - 2.5 GHz
|
Hittite Microwave Corporation
|
| HMC318MS8G07 318MS8GE |
GaAs MMIC LOW NOISE AMPLIFIER with AGC, 5.0 - 6.0 GHz
|
Hittite Microwave Corporation
|
| 318MS8GE HMC318MS8G09 |
GaAs MMIC LOW NOISE AMPLIFIER with AGC, 5 - 6 GHz
|
Hittite Microwave Corporation
|
